Short Description:

N-Channel 1200 V 113A (Tc) 455W (Tc) Through Hole TO-247-4

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
• Vgs (Max): +22V, -10V
• Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
• Power Dissipation (Max): 455W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)